Photoelectronic Properties of Imperfections in Cadmium Sulfo-Selenide Solid Solutions

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Abstract
The electron and/or hole ionization energy of imperfections in single crystals of cadmium sulfo-selenide solid solutions have been measured by a variety of photoelectronic techniques including optical absorption, optical quenching of photoconductivity, thermal quenching of photoconductivity, photoconductivity decay, and thermally stimulated conductivity. Both the optical and thermal hole ionization energy of sensitizing center acceptors undergo an abrupt decrease from a value characteristic of cadmium sulfide (∼1 eV) to a value characteristic of cadmium selenide (∼0.6 eV) between 30% and 50% cadmium selenide. The same transition is observed as an abrupt increase in the energy of the imperfection absorption edge, corresponding to the optical electron ionization energy of these centers. The electron ionization energy of electron traps varies approximately proportionally to the band gap throughout the solid solution range.