Temperature Dependence of Photo-Hall Effects in High-Resistivity Gallium Arsenide. II. Two-Carrier Effects

Analysis of photoelectronic properties of high-resistivity photoconductors by means of the temperature dependence of photo-Hall effects has been applied to a number of problems in GaAs crystals involving two-carrier conductivity. Such problems include: (1) the identity of the carriers involved in trapping processes in GaAs: Si: Cu crystals; (2) the influence of optical quenching of photoconductivity on the photo-Hall effect in photosensitive GaAs: Si: Cu crystals; and (3) an understanding of the imperfection centers present in densities up to ${10}^{19}$ ${\mathrm{cm}}^{-3\mathrm{}}$ in annealed crystals of GaAs.