The reaction of scandium thin films with silicon: diffusion, nucleation, resistivities
- 1 November 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 53, 138-146
- https://doi.org/10.1016/0169-4332(91)90254-h
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Some titanium germanium and silicon compounds: Reaction and propertiesJournal of Materials Research, 1990
- Formation of epitaxial yttrium and erbium silicide on Si(111) in ultra-high vacuumApplied Surface Science, 1989
- Metallurgical reinvestigation of rare earth silicidesApplied Surface Science, 1989
- Chemical bonding in layered Y Si≈1.7Solid State Communications, 1988
- Nucleation of a new phase from the interaction of two adjacent phases: Some silicidesJournal of Materials Research, 1988
- Growth of epitaxial ultrathin continuous CoSi2 layers on Si(111)Surface Science, 1987
- Molybdenum disilicide: Crystal growth, thermal expansion and resistivitySolid State Communications, 1985
- Epitaxial Formation of Rare Earth Silicides by Rapid AnnealingMRS Proceedings, 1985
- Valence fluctuations of ytterbium in silicon-rich compoundsJournal of the Less Common Metals, 1979
- AB compounds with Sc, Y and rare earth metals. I. Scandium and yttrium compounds with CrB and CsCl structureActa Crystallographica, 1965