Formation of epitaxial yttrium and erbium silicide on Si(111) in ultra-high vacuum
- 1 September 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 38 (1-4) , 162-170
- https://doi.org/10.1016/0169-4332(89)90532-1
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Epitaxial yttrium silicide on (111) silicon by vacuum annealingApplied Physics Letters, 1987
- Epitaxial growth of rare-earth silicides on (111) SiApplied Physics Letters, 1986
- Surface morphology of erbium silicideApplied Physics Letters, 1982
- The Schottky barrier height and Auger studies of yttrium and yttrium silicide on siliconJournal of Applied Physics, 1981
- The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type siliconApplied Physics Letters, 1981
- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981
- Contact reaction between Si and rare earth metalsApplied Physics Letters, 1981
- Diffusion marker experiments with rare-earth silicides and germanides: Relative mobilities of the two atom speciesJournal of Applied Physics, 1981
- The formation of silicides from thin films of some rare-earth metalsApplied Physics Letters, 1980
- Moving Resistive Wire ElectrodesJournal of the Electrochemical Society, 1977