A lateral microscopic growth model for heterogeneous impurity incorporation during Czochralski crystal growth
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (11) , 1001-1003
- https://doi.org/10.1063/1.91762
Abstract
The occurrence of heterogeneous impurity incorporation during growth of Czochralski silicon and germanium crystals is attributed to a microscopic kinetic mechanism of terrace growth. This is deduced from the close correspondence of striation patterns in bulk crystals with terrace traces in GaAs layers grown by liquid phase epitaxy. A simplified but generally applicable model of terrace growth for both epitaxial layers and bulk crystals is presented. The model does not depend on the occurence of constitutional supercooling.Keywords
This publication has 13 references indexed in Scilit:
- Interface Morphological Instability in Czochralski Silicon Crystal Growth from Heavily Sb‐Doped MeltJournal of the Electrochemical Society, 1979
- Surface Dislocation Theory of Reconstructed Crystals: VPE GaAsPhysica Status Solidi (a), 1975
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974
- Lamellar growth phenomena in 〈111〉-oriented dislocation-free float-zoned silicon single crystalsPhysica Status Solidi (a), 1974
- Experimental Approach to the Quantitative Determination of Dopant Segregation During Crystal Growth on a Microscale: Ga Doped GeJournal of the Electrochemical Society, 1973
- Selective Photoetching of Gallium ArsenideJournal of the Electrochemical Society, 1972
- Crystal Growth from the Melt under Destabilizing Thermal GradientsJournal of the Electrochemical Society, 1972
- Impurity Distribution in Single CrystalsJournal of the Electrochemical Society, 1967
- The growth of semiconductor crystals from solution using the twin-plane reentrant-edge mechanismJournal of Physics and Chemistry of Solids, 1964
- A possible mechanism of crystal growth from the melt and its application to the problem of anomalous segregation at crystal facetsSolid-State Electronics, 1961