Abstract
Vacuum-deposited Cu specimens were implanted with 40 keV Cu+, Ni+, Ne+, Kr+ and Xe+ ions in an electromagnetic isotope separator. The specimens were investigated for texture by X-ray diffraction techniques on implanted as well as non-implanted areas of the same specimen. It was found that a preponderance of ⟨110⟩ crystallographic axes parallel to the incident beam develops during irradiation but that the intensity of the effect is dependent on the ion species in an apparently unpredictable way. A previously suggested channelling mechanism for the origin of the effect is discussed in the light of the present findings and it is concluded that modifications to the proposed mechanism is needed to accommodate these results. It is further shown that certain implications of the results presented here could have an important bearing on ion bombardment related phenomena such as ion ranges, sputtering and materials modification by ion implantation.