Carrier dependent parameters in a silicon optical waveguide
- 1 August 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (8) , 4660-4663
- https://doi.org/10.1063/1.332623
Abstract
The infrared absorption (at λ=10.63 μm) of an electron-hole plasma, created in a thin silicon waveguide by intermittent electron beam bombardment, is measured experimentally and analyzed theoretically. In the absence of all external fields (except those of the probing laser beam) the imaginary dielectric constant is shown to be a linear function of the carrier concentration in the range 2×1022–2×1023 m−3 at room temperature. Furthermore, it is shown that the method can be used to study the possible carrier dependence of either the carrier lifetime or the surface recombination velocity.This publication has 8 references indexed in Scilit:
- Surface recombination velocity in a silicon optical waveguideApplied Physics A, 1983
- Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effectsPhysical Review B, 1982
- The optical (free-carrier) absorption of a hole-electron plasma in siliconSolid-State Electronics, 1980
- Effect of electron-hole scattering on ambipolar diffusion in semiconductorsPhysical Review B, 1980
- Determination of the Absorption and the Free Carrier Distribution in Silicon at High Level Photogeneration at 1.06 μm and 294 KPhysica Scripta, 1978
- Measurement of charge-carrier behaviour in PIN diodes using a laser techniqueSolid-State Electronics, 1978
- Experimental verification of the Shockley–Read–Hall recombination theory in siliconElectronics Letters, 1973
- The potential and carrier distributions of a p-n-p-n device in the ON stateProceedings of the IEEE, 1967