Fabrication of ZnSe-based laser diode structures by photoassisted MOVPE
- 1 February 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 184-185, 554-557
- https://doi.org/10.1016/s0022-0248(98)80115-2
Abstract
No abstract availableFunding Information
- Hoso Bunka Foundation
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 13 references indexed in Scilit:
- Compositional control of CdxZn1−xSe grown by photoassisted organometallic vapor phase epitaxyJournal of Crystal Growth, 1997
- Blue-green laser diode grown by photo-assisted MOCVDJournal of Crystal Growth, 1997
- Effects of thermal annealing on properties of p-type ZnSe grown by MOVPEMaterials Science and Engineering: B, 1997
- 100 h II-VI blue-green laser diodeElectronics Letters, 1996
- Effects of annealing atmosphere and temperature on acceptor activation in ZnSe:N grown by photoassisted MOVPEJournal of Crystal Growth, 1996
- Reduction of deep defect concentration in chlorine-doped ZnSe by after-growth thermal treatmentJournal of Applied Physics, 1995
- Photoassisted growth of II–VI semiconductor filmsApplied Surface Science, 1995
- Composition control by photo-irradiation in MOVPE of ZnCdSe and ZnCdS alloy layers and multi-layered structuresJournal of Electronic Materials, 1993
- Origin of Carrier Reduction by Annealing in n-Type ZnSeMaterials Science Forum, 1993
- Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988