Photoassisted growth of II–VI semiconductor films
- 1 February 1995
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 86 (1-4) , 431-436
- https://doi.org/10.1016/0169-4332(94)00454-4
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Photoassisted Metalorganic Vapor-Phase Epitaxy of Nitrogen-Doped ZnSe Using Tertiarybutylamine as Doping SourceJapanese Journal of Applied Physics, 1993
- Effect of laser on MOMBE of ZnSe using gaseous and solid sourcesJournal of Crystal Growth, 1993
- Light irradiation effects on impurity doping in ZnSe by photoassisted molecular beam epitaxyJournal of Crystal Growth, 1993
- Photo-assisted metalorganic vapor phase epitaxial growth of wide-gap II–VI semiconductorsJournal of Crystal Growth, 1992
- Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEEDJournal of Crystal Growth, 1991
- The effects of photo-assisted MOCVD on the doping of Na acceptors into ZnS epitaxial layersJournal of Crystal Growth, 1991
- Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp IrradiationJapanese Journal of Applied Physics, 1990
- Modulation-doped HgCdTe quantum well structures and superlattices grown by photoassisted molecular beam epitaxyJournal of Crystal Growth, 1990
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as ReactantsJapanese Journal of Applied Physics, 1990
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPEJapanese Journal of Applied Physics, 1989