Light irradiation effects on impurity doping in ZnSe by photoassisted molecular beam epitaxy
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 343-346
- https://doi.org/10.1016/0022-0248(93)90635-a
Abstract
No abstract availableKeywords
Funding Information
- Foundation for Promotion of Material Science and Technology of Japan
- Ministry of Education, Culture, Sports, Science and Technology (04204009)
This publication has 9 references indexed in Scilit:
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