Study on the behavior of surface adatoms during photoassisted MBE of ZnSe and improvement of surface morphology
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 279-283
- https://doi.org/10.1016/0022-0248(91)90753-r
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Photo-assisted MBE growth of ZnSe on GaAs substratesJournal of Crystal Growth, 1991
- Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp IrradiationJapanese Journal of Applied Physics, 1990
- Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameterJournal of Crystal Growth, 1990
- Photo-assisted MBE growth of ZnSe crystalsJournal of Crystal Growth, 1989
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Comment on the Composition of Selenium VaporThe Journal of Chemical Physics, 1968