Effect of laser on MOMBE of ZnSe using gaseous and solid sources
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 323-326
- https://doi.org/10.1016/0022-0248(93)90630-f
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Photoassisted metalorganic molecular beam epitaxy of ZnSeApplied Physics Letters, 1992
- Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor depositionApplied Physics Letters, 1992
- Molecular beam epitaxial growth of high quality GaAs on untilted (001) Si substrates assisted by electron beam irradiationApplied Physics Letters, 1990
- Surface studies of the thermal decomposition of triethylgallium on GaAs (100)Journal of Crystal Growth, 1990
- Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameterJournal of Crystal Growth, 1990
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as ReactantsJapanese Journal of Applied Physics, 1990
- Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnSJournal of Crystal Growth, 1988