Molecular beam epitaxial growth of high quality GaAs on untilted (001) Si substrates assisted by electron beam irradiation
- 19 November 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (21) , 2228-2230
- https://doi.org/10.1063/1.103899
Abstract
Using molecular beam epitaxy assisted by an electron beam irradiation with a beam energy of 50 keV at an angle of incidence 5°, we have successfully grown high quality GaAs layers on untilted (001)Si substrates. Raman spectra show that this technique reduces crystalline imperfections usually found in GaAs layers grown (001)Si substrates by a factor of 20, clearly demonstrating the effectiveness of this technique. Typical low-temperature photoluminescence spectra of undoped GaAs on Si contain four features at emission energies of 1.503, 1.488, 1.471, and 1.434 eV. The full width at half maximum (FWHM) of the bound excitonic peak with heavy holes is 2.8 meV, which can be one of the narrowest ever reported. The incident electron beam is expected to play several roles, such as cleaning Si surfaces by removing carbon/oxygen residuals, enhancement of migration rates of adatoms on the growing surface, and acceleration of the single-domain formation during the growth.Keywords
This publication has 12 references indexed in Scilit:
- Growth and characterization of GaAs films on porous SiJournal of Crystal Growth, 1989
- Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on SiJournal of Crystal Growth, 1988
- Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs SubstratesJapanese Journal of Applied Physics, 1987
- Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984
- GaAs MESFET's fabricated on monolithic GaAs/Si substratesIEEE Electron Device Letters, 1984