Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7A) , L1128-1130
- https://doi.org/10.1143/jjap.26.l1128
Abstract
Raman spectra from the (01̄1) face in GaAs epitaxial layers on both V-grooved (100)-Si and -GaAs substrates were observed. Peak- shifts in the transverse-optical (TO) modes at the edge of the V-groove were observed in hetero- and homo-epitaxial structures, respectively. Additional line broadening in the TO mode was only observed in the heteroepitaxial structure. The peak-shifts result from the epitaxially induced stress and the additional broadening was due to the fluctuation of the stress.Keywords
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