Background deep-level defects in VPE GaP
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4) , 1656-1658
- https://doi.org/10.1063/1.323848
Abstract
Residual deep‐level defects in vapor‐phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at Ec−0.44 eV and was present in concentrations of (0.1–1.6) ×1014 cm−3. Two other traps were observed at the epitaxial‐layer–substrate interface with energies of Ec−0.23 eV and Ev+0.51 eV. The capture cross section and concentration of these defects are also presented.This publication has 8 references indexed in Scilit:
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