Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide

Publisher Website

1 July 2001

journal article
Published by Elsevier in Microelectronics Reliability

Vol. 41 (7) , 991-994
https://doi.org/10.1016/s0026-2714(01)00054-3

Abstract

No abstract available

This publication has 3 references indexed in Scilit:

High ε gate dielectrics Gd2O3 and Y2O3 for silicon
Applied Physics Letters, 2000
Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures
Applied Physics Letters, 1993
Praseodymium 3d- and 4d-core photoemission spectra of $\Pr_{2}$ $O_{3}$
Physical Review B, 1991