Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures
- 26 July 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (4) , 539-541
- https://doi.org/10.1063/1.109998
Abstract
Epitaxial Si/praseodymium oxide/Si heterostructures were grown in situ on (111) oriented Si substrates using pulsed laser deposition. Growth of the oxide layer under oxygen deficient conditions resulted in hexagonal Pr2O3 (h‐Pr2O3) films which displayed a (001)Pr2O3∥(111)Si, [110]Pr2O3∥[11̄0]Si orientation and x‐ray rocking curve full width at half‐maximum values of ∼0.8°. The top Si layer grew epitaxially on the oxide film with a twinned (111)Si∥(001)Pr2O3 orientation. The surface structure of both oxide and semiconductor layers was investigated in situ using reflection high energy electron diffraction, and the resulting films were characterized using x‐ray diffraction and transmission electron microscopy.Keywords
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