The influence of adlayers on Schottky barrier formation; the adsorption of H2S and H2O on indium phosphide
- 1 October 1981
- Vol. 31 (10-12) , 539-541
- https://doi.org/10.1016/0042-207x(81)90059-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Chemisorption of Al and Ga on the GaAs (110) surfaceJournal of Vacuum Science and Technology, 1980
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Surface vacancies in InP and GaAlAsApplied Physics Letters, 1980
- Angle resolved photoelectron spectroscopy-the cleaved (110) surface of indium phosphideJournal of Physics C: Solid State Physics, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Electronic Structure of a Neutral Phosphorus Vacancy in GaP and InPPhysica Status Solidi (b), 1979
- The influence of intermediate adsorbed layers on the metal contacts formed to indium phosphide crystalsSurface Science, 1979
- Surface characterisation of indium phosphideSurface Science, 1975
- Chemisorption on gallium phosphide surfacesSurface Science, 1973