Structural and luminescence properties of stoichiometry-related faulted loops in Czochralski-grown Fe-doped InP
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3) , 503-507
- https://doi.org/10.1016/0022-0248(86)90483-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Substrate effects on performance of InP MOSFETsElectronics Letters, 1982
- The identification of faulted prismatic dislocation loops in single crystals of undoped InPJournal of Materials Science, 1981
- Etch features in Czochralski-grown single crystal indium phosphideJournal of Materials Science, 1980
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965