Effect of native oxide on the interface property of GaAs MIS structures
- 15 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (8) , 761-762
- https://doi.org/10.1063/1.90495
Abstract
Interface native oxide has been found to cause anomalous frequency dispersion of capacitance in the accumulation region of n‐GaAs MIS structures. Sputter etching by nitrogen is effective to remove the native oxide layer and obtain normal C‐V characteristics by probably reducing surface‐state density. The present results indicate that native oxide would not be essentially suitable for passivation of GaAs with low surface‐state density.Keywords
This publication has 3 references indexed in Scilit:
- Reactive sputtering of gallium nitride thin films for GaAs MIS structuresApplied Physics Letters, 1978
- Anodic Oxidation of GaAs Using Oxygen PlasmaJapanese Journal of Applied Physics, 1978
- Anomalous frequency dispersion of m.o.s. capacitors formed on n -type GaAs by anodic oxidationElectronics Letters, 1976