Measurement of elastic relaxation in cross-sectional transmission electron microscopy of GexSi1−x/Si strained-layer superlattices
- 20 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (3) , 324-326
- https://doi.org/10.1063/1.107925
Abstract
Two types of relaxation occur in the cross‐sectional transmission electron microscopy samples of the GexSi1−x/Si strained‐layer superlattices (SLS) by large‐angle convergent‐beam electron diffraction (LACBED) and imaging technique which gives a good LACBED pattern superimposed on a high spatial resolution shadow image of the SLS. One type of relaxation occurs between the Si and the GeSi layers. It is negligible in the convergent‐beam electron diffraction (CBED) case for the larger value of the ratio of the sample thickness to the SLS wavelength. Another type occurs between the superlattice as an average crystal and the Si substrate. The relaxation of the SLS can be measured by the shift of the Kikuchi line in the SLS from that in the Si substrate.Keywords
This publication has 12 references indexed in Scilit:
- High-resolution shadow image superimposed on LACBED patterns: a method demonstrated on GexSi1−x/Si superlatticeUltramicroscopy, 1992
- Novel strain-induced defect in thin molecular-beam epitaxy layersPhysical Review Letters, 1989
- Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substratesApplied Physics Letters, 1989
- CBED and CBIM from semiconductors and superconductorsUltramicroscopy, 1988
- Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystalsPhilosophical Magazine A, 1988
- Transmission electron microscopy of elastic relaxation effects in Si–Ge strained layer superlattice structuresJournal of Vacuum Science & Technology A, 1988
- On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1−x.AsyP1−yepitaxial layersPhilosophical Magazine A, 1985
- Structure imaging of commensurate GexSi1−x/Si(100) interfaces and superlatticesApplied Physics Letters, 1985
- The effect of elastic relaxation on the local structure of lattice-modulated thin filmsUltramicroscopy, 1984
- Effect of layer size on lattice distortion in strained-layer superlatticesApplied Physics Letters, 1984