Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals
- 1 November 1988
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 58 (5) , 787-798
- https://doi.org/10.1080/01418618808209953
Abstract
A new transmission electron microscopy technique is described, convergent-beam imaging (CBIM), in which an image is formed using a convergent beam focused above or below a thin crystalline specimen. Superimposed on the image are higher-order Laue zone (HOLZ) lines, the displacements of which map the spatial variation of strains, lattice parameters and crystallographic rotations. The image has its normal resolution, the superimposed diffraction information has an angular resolution of about 10−4 rad, and this diffraction information comes from regions of the specimen defined approximately by the cross-over size of the electron probe size, broadened by beam spreading. The visibility of HOLZ lines in the CBIM image is significantly improved by cooling the specimen. The CBIM technique is illustrated by its application to a Si/GexSi1−x strained-layer structure, where spatial changes in the lattice parameter and crystal symmetry are revealed by the relative positions of the HOLZ lines in the Si and alloy layers. Moreover, distortions arising from surface relaxation effects near the Si/GexSi1−x interfaces can be directly visualized from the curvature of HOLZ lines as these lines cross an interface. The CBIM technique has general application to the investigation of crystalline systems where localized variations in strain, lattice parameter, crystal symmetry and crystallographic rotation are of interest.Keywords
This publication has 10 references indexed in Scilit:
- Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffractionApplied Physics Letters, 1987
- On “parallel” illumination in the transmission electron microscopeUltramicroscopy, 1986
- Strained-Layer Epitaxy of Germanium-Silicon AlloysScience, 1985
- Elastic relaxation in transmission electron microscopy of strained-layer superlatticesApplied Physics Letters, 1985
- On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1−x.AsyP1−yepitaxial layersPhilosophical Magazine A, 1985
- Applications of modern microdiffraction to materials scienceJournal of Microscopy, 1984
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Higher order Laue zone effects in electron diffraction and their use in lattice parameter determinationProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1977
- A practical method of three-dimensional space-group analysis using convergent-beam electron diffractionActa Crystallographica Section A, 1975
- Study of Thin Crystalline Films by Universal Electron Diffraction MicroscopeJournal of the Physics Society Japan, 1954