Site changes of ion-implanted Li in GaAs below 300 K
- 10 July 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (2) , 179-182
- https://doi.org/10.1103/physrevlett.63.179
Abstract
The lattice sites of implanted Li in GaAs single crystals have been determined between 80 and 300 K by measuring channeling and blocking effects of α particles emitted in the decay of implanted radioactive . Below 220 K the tetrahedral interstitial site is preferentially occupied, whereas between 220 and 300 K substitutional and irregular sites are increasingly populated. These site changes are attributed to, respectively, reactions with negatively charged Ga vacancies and defect complexes in recovery stages I and II of GaAs.
Keywords
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