X-ray diffraction analysis of the defect structure in epitaxial GaN
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- 2 October 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (14) , 2145-2147
- https://doi.org/10.1063/1.1314877
Abstract
High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in (001)-oriented GaN epitaxial layers. For this, (00l) and (hkl) Bragg reflections with h or k nonzero were studied, the latter one measured in skew symmetric diffraction geometry. The defect analysis was applied to a variety of GaN layers grown by molecular-beam epitaxy under very different conditions. The outcome is a fundamental correlation between the densities of edge- and screw-type dislocations.Keywords
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