10–20 MeV energy range Si implantations into InP:Fe
- 1 December 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (11) , 7188-7190
- https://doi.org/10.1063/1.349762
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- High-energy Si implantation into InP:FeJournal of Applied Physics, 1991
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- The pearson IV distribution and its application to ion implanted depth profilesRadiation Effects, 1980