Rapid thermal annealing of elevated-temperature silicon implants in InP

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Abstract
Rapid thermal annealing of elevated-temperature Si implants in InP is shown to result in higher donor activation and electron mobility with lower-temperature–shorter-anneal cycles than for room-temperature implants. The reduced cycles (temperature below 800 °C with times of ∼10 s) also result in process simplification with negligible thermal surface degradation and insignificant Si diffusion. The results are demonstrated with a dual-energy implant scheme applicable to field-effect transistors and with a single-energy heavy-dose implant useful for achieving low-resistance ohmic contacts.