Semi-insulating GaAs examined using a three-band model

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Abstract
Electrical transport parameters were calculated at 296 K as a function of Fermi energy around n‐ and p‐type conversion points using a three‐band model comprising the Γ1 C and the heavy and light hole bands. This study indicates that all of the recently reported semi‐insulating GaAs are n type (negative Hall coefficient), and futhermore the electrical transport phenomena can be explained only in terms of electrons and the contribution of the holes can be neglected. The resultant calculations can be used in assessing the semi‐insulating GaAs crystals in a routine way only by measuring the electrical conductivity and Hall coefficient at one temperature, 296 K.