Materials for light emitting diodes and lasers
- 30 September 1975
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 15 (3) , 211-219
- https://doi.org/10.1016/0020-0891(75)90034-2
Abstract
No abstract availableKeywords
This publication has 51 references indexed in Scilit:
- Efficient green electroluminescent junctions in GaPPublished by Elsevier ,2002
- Efficient red GaP LED's with compensated p layersJournal of Applied Physics, 1974
- Characteristics of tunable Pb1−xSnx Te junction lasers in the 8–12-μm regionJournal of Applied Physics, 1973
- High-power output in Pb1−xSnxTe diode lasers with improved mirror qualityJournal of Applied Physics, 1973
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Direct Evidence for Generation of Defect Centers during Forward-Bias Degradation of GaAs1−xPxElectroluminescent DiodesJournal of Applied Physics, 1971
- Calculated efficiencies of practical GaAs and Si solar cells including the effect of built-in electric fieldsSolid-State Electronics, 1970
- Properties of Efficient Silicon-Compensated AlxGa1−xAs Electroluminescent DiodesJournal of Applied Physics, 1969
- Tuning of PbSe Lasers by Hydrostatic Pressure from 8 toPhysical Review B, 1968
- Pulled crystals of gallium phosphide by the liquid encapsulation methodJournal of Crystal Growth, 1968