Etching of InP by HCl in an OMVPE reactor
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 203-208
- https://doi.org/10.1016/0022-0248(91)90457-g
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Vapor‐Phase Etching of InP Using Anhydrous HCl and PH 3 GasJournal of the Electrochemical Society, 1986
- In-situ etching of InP by a low pressure transient HCI processJournal of Crystal Growth, 1985
- In situ vapor-etch for InP MOVPE using ethylene dibromideJournal of Crystal Growth, 1984