Recombination Relaxation Effects in Germanium Surfaces
- 1 October 1959
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 74 (4) , 395-400
- https://doi.org/10.1088/0370-1328/74/4/302
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- High-Frequency Relaxation Processes in the Field-Effect ExperimentPhysical Review B, 1957
- Distribution and Cross Sections of Fast States on Germanium Surfaces in Different Gaseous AmbientsPhysical Review B, 1957
- Field Effect in Germanium at High FrequenciesPhysical Review B, 1957
- Surface Conductance and the Field Effect on GermaniumPhysical Review B, 1956
- Combined Measurements of Field Effect, Surface Photo-Voltage and PhotoconductivityBell System Technical Journal, 1956
- Field-Induced Conductivity Changes in GermaniumPhysical Review B, 1956
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955
- Modulation of the Surface Conductance of Germanium and Silicon by External Electric FieldsProceedings of the Physical Society. Section B, 1955
- Surface Properties of GermaniumBell System Technical Journal, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952