Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy

This publication has 17 references indexed in Scilit:

• Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−y lattice matched to InP
  Journal of Applied Physics, 1994
• Two-dimensional phase separation in ${\mathrm{In}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$${\mathrm{As}}_{\mathit{y}}$${\mathrm{P}}_{1\mathrm{-}\mathit{y}}$ epitaxial layers
  Physical Review B, 1992
• On the electron diffraction contrast of coherently strained semiconductor layers
  Philosophical Magazine A, 1991
• X‐Ray, Photoluminescence, Stoichiometry, and Thickness Mapping of In1 − x Ga x As y P 1 − y
  Journal of the Electrochemical Society, 1991
• Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers
  Journal of Applied Physics, 1985
• On elastic relaxation and long wavelength microstructures in spinodally decomposed In_xGa_1−x.As_yP_1−yepitaxial layers
  Philosophical Magazine A, 1985
• Spinodal decomposition in InGaAsP epitaxial layers
  Journal of Crystal Growth, 1984
• Miscibility gaps in quaternary III/V alloys
  Journal of Crystal Growth, 1982
• Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substrates
  Applied Physics Letters, 1982
• Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation
  Japanese Journal of Applied Physics, 1982