Field dependence of the low temperature quantum efficiency, mobility and (μ τ) — product in a-Si:H
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 411-414
- https://doi.org/10.1016/s0022-3093(05)80142-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloysPhysical Review B, 1991
- Electron drift mobility in a-Si : H under extremely high electric fieldSolid State Communications, 1990
- Electron drift mobility in amorphous Si: HPhilosophical Magazine Part B, 1986