Reflectance-difference studies of organometallic chemical vapor deposition growth transients on (100) GaAs
- 31 December 1988
- journal article
- editorial
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 931
- https://doi.org/10.1016/0022-0248(88)90644-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Optical reflectance measurements of transients during molecular-beam epitaxial growth on (001) GaAsJournal of Vacuum Science & Technology B, 1988
- Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)Physical Review Letters, 1987