Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
- 12 October 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (15) , 1687-1690
- https://doi.org/10.1103/physrevlett.59.1687
Abstract
Optical reflectance and reflectance-difference changes resulting from abrupt changes in As and Ga fluences during molecular-beam-epitaxy growth on GaAs(001) are shown to provide surface chemical information, thereby complementing the structural data available from reflection high-energy electron diffraction. Polarization and spectral dependences suggest that the observed optical anisotropies arise from absorption associated with Ga—Ga surface dimer bonds.Keywords
This publication has 19 references indexed in Scilit:
- Existence of metastable step density distributions on GaAs(100) surfaces and their consequence for molecular beam epitaxial growthApplied Physics Letters, 1986
- Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillationsSuperlattices and Microstructures, 1985
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanismsJournal of Vacuum Science & Technology B, 1985
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics studyApplied Physics Letters, 1985
- The dependence of RHEED oscillations on MBE growth parametersJournal of Vacuum Science & Technology B, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Disorder on GaAs(001) surfaces prepared by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Epitaxy by periodic annealingSurface Science, 1969
- GaAs, GaP, and GaAs[sub x]P[sub 1−x] Epitaxial Films Grown by Molecular Beam DepositionJournal of Vacuum Science and Technology, 1969