Chapter 3 Silicon and Germanium Avalanche Photodiodes

This publication has 74 references indexed in Scilit:

• High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions
  Electronics Letters, 1983
• Ionization coefficient measurement in GaAs by using multiplication noise characteristics
  Solid-State Electronics, 1981
• Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode
  Japanese Journal of Applied Physics, 1980
• Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm
  IEEE Journal of Quantum Electronics, 1978
• Avalanche photodiodes with a gain-bandwidth product of more than 200 GHz
  Applied Physics Letters, 1975
• Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors
  Physical Review B, 1972
• Frequency response of PIN avalanching photodiodes
  IEEE Transactions on Electron Devices, 1967
• MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION
  Applied Physics Letters, 1965
• Intrinsic Optical Absorption in Germanium-Silicon Alloys
  Physical Review B, 1958
• A Study of the Etching Rate of Single-Crystal Germanium
  Journal of the Electrochemical Society, 1955