Monolithic 60 GHz Amplifier using Low Noise Pseudomorphic HEMTs
- 1 September 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 341-345
- https://doi.org/10.1109/euma.1991.336456
Abstract
The design and fabrication of a monolithic 60 GHz low noise amplifier is presented. As active device very low noise pseudomorphic HEMTs with Fmax ≈ 200 GHz have been developed and fabricated using a full monolithic technology. A two stage amplifier has been fabricated having reflexion losses below 10 dB and a gain of 5 dB at 58 GHz.Keywords
This publication has 2 references indexed in Scilit:
- Microwave Performance of Dual-Gate Cascode MESFET and HEMT Devices with High Gain at Low Noise LevelsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- A Method for Calculating the Frequency-Dependent Properties of Microstrip DiscontinuitiesIEEE Transactions on Microwave Theory and Techniques, 1977