Evidence forHole-Driven Conductivity inandThin Films
- 27 October 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 79 (17) , 3230-3233
- https://doi.org/10.1103/physrevlett.79.3230
Abstract
Oxygen -edge electron-energy-loss spectra have been measured for and thin films as a function of and . The spectra show a prepeak at the Fermi level, corresponding to transitions to empty states in the band, at the threshold of the edge around 529 eV. This prepeak systematically increases with an increase in conductivity through divalent doping or oxygen content . This confirms that these materials are charge-transfer-type oxides with carriers having significant oxygen hole character. We argue that, the double exchange mechanism has to include the role of oxygen hole density to satisfactorily describe their transport properties.
Keywords
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