A hot carrier induced low-level leakage current in thin silicon dioxide films
- 1 January 1995
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A new kind of stress induced low level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the drain edge. Since the voltage dependence of this new kind of LLLC is steeper than that in the conventional FN stress-induced LLLC, each conduction mechanism may be different. This LLLC is reduced by both hot electron injection and UV irradiation. These reductions are never observed in the FN stress-induced LLLC. The most promising conduction mechanism is sequential tunneling via trapped holes.Keywords
This publication has 6 references indexed in Scilit:
- Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxidesIEEE Transactions on Electron Devices, 1993
- Stress-induced oxide leakageIEEE Electron Device Letters, 1991
- Electrical conduction in MOS capacitors with an ultra-thin oxide layerSolid-State Electronics, 1991
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988
- High-field-induced voltage-dependent oxide chargeApplied Physics Letters, 1986
- Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunnelingJournal of Vacuum Science and Technology, 1982