Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6A) , L1061
- https://doi.org/10.1143/jjap.28.l1061
Abstract
Scanning isothermal current transient spectroscopy (SICTS) is proposed for the microscopic deep-level distribution measurement in semiconductors and applied to the spatial distribution measurement of gap states in hydrogenated amorphous silicon films.Keywords
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