Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films

Abstract
Scanning isothermal current transient spectroscopy (SICTS) is proposed for the microscopic deep-level distribution measurement in semiconductors and applied to the spatial distribution measurement of gap states in hydrogenated amorphous silicon films.

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