Electrolyte-oxide-semiconductor junction at the p-InP/V 2+-V 3+ interface
- 1 May 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (9) , 710-712
- https://doi.org/10.1063/1.92488
Abstract
Voltammetric measurements show that a thin passivating film exists at the p‐InP/V2+‐V3+ electrolyte interface, which allows efficient minority‐carrier collection via tunneling. An electrolyte‐oxide‐semiconductor energy band diagram is presented that explains the properties of the p‐InP/V2+‐V3+, 4‐M HCl/C solar cell.Keywords
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