Bulk crystal growth of 6H-SiC on polytype-controlled substrates through vapor phase and characterization
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 733-739
- https://doi.org/10.1016/0022-0248(91)90836-t
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Science Society
This publication has 8 references indexed in Scilit:
- Single crystal growth of hexagonal SiC on cubic SiC by intentional polytype controlJournal of Crystal Growth, 1990
- Growth of 6H-SiC on CVD-Grown 3C-SiC SubstratesMRS Proceedings, 1989
- IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substratesIEEE Transactions on Electron Devices, 1981
- General principles of growing large-size single crystals of various silicon carbide polytypesJournal of Crystal Growth, 1981
- Site effect on the impurity levels in,, andSiCPhysical Review B, 1980
- Site-dependent donor and acceptor levels in 6 H-SiCJournal of Luminescence, 1979
- Static Dielectric Constant of SiCPhysical Review B, 1970
- Inequivalent Sites and Multiple Donor and Acceptor Levels in SiC PolytypesPhysical Review B, 1962