Photoluminescence and magnetic resonance studies of Er3+ in MeV ion-implanted GaAs
- 4 February 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (5) , 502-504
- https://doi.org/10.1063/1.104621
Abstract
The effects of post‐implantation annealing have been studied in MeV Er‐implanted GaAs by monitoring the Er3+ electron paramagnetic resonance (EPR) signal as well as the Er3+ and near‐band‐edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3+ PL is observed from several distinct Er sites in the annealed material. In addition, the observed dependences upon anneal temperature suggest that the Er3+ PL is emitted from centers that are not in the Er3+ state at equilibrium. Absolute EPR measurements of the Er3+ concentration indicate that only a small fraction (3+.Keywords
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