Radiation-induced E′ centers in H2-annealed oxide films

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Abstract
In oxides fabricated by thermal oxidation or ion implantation, an order‐of‐magnitude increase is observed in the concentration of radiation‐induced E’ centers when the oxide is first exposed to H2 at temperatures greater than 600 °C. To the authors’ knowledge, we report the first data indicating that preirradiation hydrogen annealing of thermal oxides causes a large increase in the concentration of radiation‐induced E’ centers. We discuss evidence suggesting that the hydrogen anneal creates a new E’ precursor, Si—H, from Si—Si bonds.