Simplified evaluation method for light-biased effective lifetime measurements
- 29 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (13) , 1795-1797
- https://doi.org/10.1063/1.119401
Abstract
In this letter, we present a simplified evaluation method for light-biased photoconductance decay measurements. The measured effective lifetime is shown to be a differential quantity τeff,d, which may differ significantly from the actual effective lifetime τeff. However, the actual effective lifetime can be approximated by integrating τeff,d directly over the incident power density of the bias light. The quality of the approximation depends mainly on the surface recombination velocity and the wavelength of the used bias light. However, the inaccuracy remains well below 10% for most practical cases.Keywords
This publication has 14 references indexed in Scilit:
- Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafersJournal of Applied Physics, 1997
- Record low surface recombination velocities on 1 Ω cm p-silicon using remote plasma silicon nitride passivationApplied Physics Letters, 1996
- On the data analysis of light-biased photoconductance decay measurementsJournal of Applied Physics, 1996
- Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers with Chemically Passivated SurfacesJapanese Journal of Applied Physics, 1996
- Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride interfaceApplied Physics Letters, 1995
- Note on the interpretation of injection-level-dependent surface recombination velocitiesApplied Physics A, 1995
- Optical properties of intrinsic silicon at 300 KProgress In Photovoltaics, 1995
- Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductorsJournal of Applied Physics, 1994
- Injection-level-dependent recombination velocities at the Si-SiO2 interface for various dopant concentrationsJournal of Applied Physics, 1994
- Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interfaceJournal of Applied Physics, 1992