Material-based comparison for power heterojunction bipolar transistors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (11) , 2410-2416
- https://doi.org/10.1109/16.97401
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Design optimization of microwave power heterojunction bipolar transistor cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Fabrication of a diamond p-n junction diode using the chemical vapour deposition techniqueSolid-State Electronics, 1991
- High-temperature thin-film diamond field-effect transistor fabricated using a selective growth methodIEEE Electron Device Letters, 1991
- Extremely low-resistance nonalloyed ohmic contacts on molecular beam epitaxially grown p -type GeElectronics Letters, 1990
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for applicationIEEE Transactions on Electron Devices, 1989
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- Optimization of maximum oscillation frequency of a bipolar transistorSolid-State Electronics, 1987
- The Technology and Physics of Molecular Beam EpitaxyPublished by Springer Nature ,1985
- Thermal conductivity of GaN, 25–360 KJournal of Physics and Chemistry of Solids, 1977