Effect of pressure on exciton energies of homoepitaxial GaN
- 1 October 1998
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 108 (7) , 433-438
- https://doi.org/10.1016/s0038-1098(98)00381-0
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
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