Zero-Bias Resistance Peak in Oxide-Semiconductor Junctions
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9B) , L1322
- https://doi.org/10.1143/jjap.31.l1322
Abstract
A zero-bias resistance peak appeared in the tunneling resistance curve of Bi-cuprates, Na0.89WO3 and ReO3, contacted with GaAs or SnO2-x . Therefore the peak is not inherent to high-T c superconductors and may not be relevant to the electronic properties in the bulk.Keywords
This publication has 23 references indexed in Scilit:
- Reproducible tunneling characteristics and zero-bias anomalies in YBaCuO tunnel junctionsPhysica C: Superconductivity and its Applications, 1992
- Zero bias anomalies in YBa2Cu3O7 tunnel junctionsPhysica C: Superconductivity and its Applications, 1992
- Break junction tunnelling on Bi2Sr2CaCu2O8+?-single crystalsZeitschrift für Physik B Condensed Matter, 1992
- Origin of the linear tunneling conductance backgroundPhysical Review B, 1992
- Use of a ReO3 Single Crystal as the Tip for Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 1991
- Tunneling conductance of a Bi2?xPbxSr2Ca2Cu3O10?y-SnO2 junctionZeitschrift für Physik B Condensed Matter, 1991
- Electronic structure of: A photoemission study covering the entire concentration rangePhysical Review B, 1982
- Surface characterization of sodium tungsten bronzesApplications of Surface Science, 1980
- Surface States and Catalysis on-Band PerovskitesPhysical Review Letters, 1973
- Electron-Phonon Coupling in the Barriers of GaAs Schottky DiodesPhysical Review B, 1968