New emission line in highly excited GaN
- 1 March 1976
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 12-13, 611-615
- https://doi.org/10.1016/0022-2313(76)90149-6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974
- Exciton Interaction in Photoluminescence from ZnOPhysica Status Solidi (b), 1974
- Luminescence in GaNJournal of Luminescence, 1973
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- Exciton-Exciton Interaction in CdS, CdSe, and ZnOPhysical Review Letters, 1970
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Radiative Recombination in Highly Excited CdSPhysical Review B, 1969