An experimental and theoretical analysis of double-diffused MOS transistors
- 1 October 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 10 (5) , 322-331
- https://doi.org/10.1109/jssc.1975.1050618
Abstract
An experimental and theoretical study of double-diffused MOS transistors (DMOST's) has been made. A simple, analytic two-transistor model gives insight into DMOS device physics as well as predicting DMOST characteristics. Both the model and experimental results show that three distinct regions of operation exist: short-channel control, long-channel control, and carrier velocity saturation control. Quantitative criteria are established for judging the region of operation as a function of device parameters and terminal voltages. A DMOST may be optimized to have the same d.c. characteristics as its short-channel component transistor over most of its operating range. A two-transistor model suitable for Computer-Aided Circuit Design (CAD) is also presented.Keywords
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