Defect Analysis on GaAs Crystals by Precision Measurements of Density and Lattice Parameter
- 16 November 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 122 (1) , 139-152
- https://doi.org/10.1002/pssa.2211220113
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Transmission electron microscope study of arsenic precipitates in GaAs: Morphology and orientation relationship with the matrixJournal of Crystal Growth, 1989
- Anomalous reduction of lattice parameter by residual impurity boron in undoped Czochralski-grown GaAsApplied Physics Letters, 1988
- Temperature-chemical potential diagrams for the representation of defect and phase equilibria in compound semiconductors—application to gallium arsenideJournal of Physics and Chemistry of Solids, 1988
- Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomographyJournal of Applied Physics, 1987
- Imaging and analysis of carbon distribution in GaAs using radioactive tracer 14CJournal of Crystal Growth, 1987
- Native Point Defects and Nonstoichiometry in GaAs (I). Homogeneity Region of Gallium ArsenideCrystal Research and Technology, 1986
- Correlation of GaAs lattice parameter to growth and annealing conditionsJournal of Applied Physics, 1986
- Isotopic Abundances and Atomic Weights of the ElementsJournal of Physical and Chemical Reference Data, 1984
- Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenideJournal of Physics and Chemistry of Solids, 1979
- Determination of the Solidus and Gallium and Phosphorus Vacancy Concentrations in GaPJournal of the Electrochemical Society, 1974